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Effect of Ga Incorporation and Film Thickness on the Optical Properties of as-Deposited Amorphous GaxSel-x Thin Films

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dc.contributor.author Austine A Mulama, Julius M Mwabora, Andrew O Oduor, Cosmas M Muiva, Chrispinus M Walloga
dc.date.accessioned 2020-11-20T08:40:26Z
dc.date.available 2020-11-20T08:40:26Z
dc.date.issued 2014
dc.identifier.uri https://repository.maseno.ac.ke/handle/123456789/2873
dc.description.abstract Flash evaporated amorphous GaxSe1-x (x = 0, 1, 2, 3, and 4 atomic %) on glass substrates have been investigated within a 500nm-1500nm spectral range. Film thicknesses explored were ; 200±10nm, 265±10nm, 330±10nm, and 400±10nm. The effect of film thickness and gallium content on the as-deposited thin films has been established. As the gallium content increases, both the optical transmittance and band gap energy decrease. Increase in film thickness led to a decrease in optical transmittance and an increase in the band gap energy. The other optical parameters like the absorption coefficient, extinction coefficient, refractive index, real part and imaginary part of dielectric constant increase with increase in gallium content and film thickness. en_US
dc.publisher University if Nairobi Research archive en_US
dc.subject : Amorphous thin film, Film thickness, Ga-Se alloy, Optical property en_US
dc.title Effect of Ga Incorporation and Film Thickness on the Optical Properties of as-Deposited Amorphous GaxSel-x Thin Films en_US
dc.type Article en_US


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