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dc.contributor.authorFrancis Otieno, Mildred Airo, Rudolph M Erasmus, David G Billing, Alexander Quandt, Daniel Wamwangi
dc.date.accessioned2022-01-23T07:43:17Z
dc.date.available2022-01-23T07:43:17Z
dc.date.issued2017
dc.identifier.urihttps://repository.maseno.ac.ke/handle/123456789/4549
dc.description.abstractAluminium doped zinc oxide thin films are prepared by Radio Frequency magnetron sputtering in pure argon atmosphere at 100 W. The structural results reveal good film adhesion on a silicon substrate (001). The thin films were then subjected to heat treatment in a furnace under ambient air. The structural, morphological, and optical properties of the thin films as a function of deposition time and annealing temperatures have been investigated using Grazing incidence X-Ray Diffraction (GIXRD), Atomic Force Microscopy, and Scanning Electronic Microscopy. The photoluminescence properties of the annealed films showed significant changes in the optical properties attributed to mid gap defects. Annealing increases the crystallite size and the roughness of the film. The crystallinity of the films also improved as evident from the Raman and XRD studies.en_US
dc.publisherAIP Publishing LLCen_US
dc.titleStructural and spectroscopic analysis of ex-situ annealed RF sputtered aluminium doped zinc oxide thin filmsen_US
dc.typeArticleen_US


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