| dc.description.abstract | Flash evaporated amorphous Se Bi
(x = 0, 1, 2, 3, and 4 at. %) thin films of 350 ± 10 thickness have been
investigated in the wavelength range of 200nm − 3000nm. It is found that the effect of increasing bismuth content on the as
deposited films led to increased absorption coefficient, reflectance, refractive index and extinction coefficient while
transmittance and optical band gap energy decreased. The Raman spectra showed peaks at 238.8
,248.3
,
249.5
, 250.7
, 251.9
, 488.1
, and 489.3 due to selenium rings and chains at various bismuth
concentrations. | en_US |
