| dc.contributor.author | Austine A Mulama, Julius M Mwabora, Andrew O Oduor, Cosmas M Muiva | |
| dc.date.accessioned | 2020-11-20T08:34:26Z | |
| dc.date.available | 2020-11-20T08:34:26Z | |
| dc.date.issued | 2014 | |
| dc.identifier.uri | https://repository.maseno.ac.ke/handle/123456789/2871 | |
| dc.description.abstract | Amorphous thin films of Se85-xTe15Sbx (x = 0.0, 0.5, 2.5, and 5.0 at. %) deposited by flash evaporation technique, have been investigated in the wavelength range of 500nm-3000nm. It is found that the effect of increasing antimony content and film thickness on the as-deposited films led to increase in the absorption coefficient. The optical band gap energy decreased with increase in antimony concentration but increased with increase in film thickness. | en_US |
| dc.publisher | Africa Journal of Physical Sciences | en_US |
| dc.subject | Amorphous Chalcogenide, Alloy, Film Thickness, and Optical Property | en_US |
| dc.title | Investigation of the Effect of Film Thickness on the Optical Properties of Amorphous Se85-xTe15Sbx Thin Films | en_US |
| dc.type | Article | en_US |
